Characterization and Modeling of Graphene Transistor Low-Frequency Noise

Abstract : This brief presents low-frequency noise measurements on a graphene field-effect transistor with graphene layer decomposed from SiC substrate. The measurements indicate the predominance of flicker noise in the current noise source measured between drain and source with quadratic dependence with a drain current. The noise level is inversely proportional to the channel area indicating the location of the main noise source to be in graphene layer. From these measurements, the main noise sources, including the main flicker noise and the Johnson noise contributions, have been introduced in a compact model. This compact model has been built using dc characterization results. Finally, the noise compact model has been validated through comparison to noise measurement.
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Article dans une revue
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (2), pp.516-519. 〈10.1109/TED.2011.2175930〉
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https://hal.archives-ouvertes.fr/hal-00669458
Contributeur : Sebastien Fregonese <>
Soumis le : lundi 13 février 2012 - 11:53:25
Dernière modification le : jeudi 18 octobre 2018 - 01:25:03

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Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, et al.. Characterization and Modeling of Graphene Transistor Low-Frequency Noise. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (2), pp.516-519. 〈10.1109/TED.2011.2175930〉. 〈hal-00669458〉

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