Evaluation of Recent Technologies of Nonvolatile RAM

Abstract : Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (4), pp.1982 - 1991. 〈10.1109/TNS.2008.920255〉
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https://hal.archives-ouvertes.fr/hal-00667419
Contributeur : Frédéric Darracq <>
Soumis le : mardi 7 février 2012 - 15:49:36
Dernière modification le : jeudi 15 novembre 2018 - 08:38:02

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T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, et al.. Evaluation of Recent Technologies of Nonvolatile RAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (4), pp.1982 - 1991. 〈10.1109/TNS.2008.920255〉. 〈hal-00667419〉

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