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Evaluation of Recent Technologies of Nonvolatile RAM

Abstract : Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
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https://hal.archives-ouvertes.fr/hal-00667419
Contributor : Frédéric Darracq <>
Submitted on : Tuesday, February 7, 2012 - 3:49:36 PM
Last modification on : Tuesday, March 26, 2019 - 2:28:03 PM

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T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, et al.. Evaluation of Recent Technologies of Nonvolatile RAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (4), pp.1982 - 1991. ⟨10.1109/TNS.2008.920255⟩. ⟨hal-00667419⟩

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