Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Nicolas Camara (1, 2) , Benoit Jouault (1) , Bilal Jabakhanji (1) , Alessandra Caboni (2) , Antoine Tiberj (1) , Christophe Consejo (1) , Philipe Godignon (2) , Jean Camassel (1)

1 L2C - Laboratoire Charles Coulomb
2 CNM - National Centre for Microelectronic

Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8 degrees off axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

Mots clés: GRAPHITE; GAS

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Nicolas Camara, Benoit Jouault, Bilal Jabakhanji, Alessandra Caboni, Antoine Tiberj, et al.. Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale Research Letters, 2011, 6, pp.141. ⟨10.1186/1556-276X-6-141⟩. ⟨hal-00666145⟩