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Communication Dans Un Congrès Année : 2011

Copper electroplating into deep microvias for the ''SiP'' application

Résumé

In order to anticipate the further demands of miniaturization and integration of ldquoSystem-in-Packagerdquo, the technology of 3D through-silicon-vias (TSVs) has been developed at NXP Semiconductors. The sputtering and the electroplating have been chosen for realize respectively a copper seed layer and a thick copper deposition inside 75 mum wide and hundreds micrometer deep microvias. The microvias, for an aspect-ratio (AR) up to 2.3, can be successfully covered by a sputtered 3 mum thick copper layer. To achieve a thick microvia filling, the pulsed current is preferred and a perpendicular electrolyte flow is critical. With an 11 mum thick patterned photoresist mask on the field, the 75 mum diameter and 180 mum deep microvias can be more-than-the-half filled using the ldquosuperfillingrdquo recipe when the field depositing layer reaches the mask level. Such partially filled microvias exhibit excellent electrical resistances within the range of 4 mOmega.

Dates et versions

hal-00664411 , version 1 (30-01-2012)

Identifiants

Citer

Cheng Fang, Alain Le Corre, Dominique Yon. Copper electroplating into deep microvias for the ''SiP'' application. The 2010 International workshop on "Materials for Advanced Metallization" (MAM 2010), Mar 2010, Mechelen, Belgium. pp.749-753, ⟨10.1016/j.mee.2010.07.034⟩. ⟨hal-00664411⟩

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