Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques (1) , Sigo Scharnholz (1) , Jens-Peter Konrath (1) , Nicolas Dheilly (2) , Dominique Planson (2) , Rik W. de Doncker (3)

1 ISL - Institut franco-allemand de recherches de Saint-Louis
2 AMPERE - Ampère
3 ISEA - Institut für Stromrichtertechnik und Elektrische Antriebe

With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the material surface. It was shown that these simple devices are well suited as test devices.

Mots clés: Breakdown Voltage; Leakage Current; Mesa-Termination; PiN Diode; Silicon Carbide (SiC)

Domaines: Energie électrique

Gontran Pâques, Sigo Scharnholz, Jens-Peter Konrath, Nicolas Dheilly, Dominique Planson, et al.. Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height. Materials Science Forum, 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩. ⟨hal-00661475⟩