Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen (1) , Gontran Pâques (2) , Nicolas Dheilly (1) , Christophe Raynaud (1) , Dominique Tournier (1) , Jens-Peter Konrath (2) , Sigo Scharnholz (2) , Dominique Planson (1)

1 AMPERE - Ampère
2 ISL - Institut franco-allemand de recherches de Saint-Louis

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

Mots clés: Temperature Dependence of Breakdown Voltage; 4H-SiC; Avalanche Diode; Ionization Coefficient; Zener Diode

Domaines: Energie électrique

Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. CSCRM, Aug 2010, Oslo, Norway. ⟨hal-00661470⟩