Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen (1) , Christophe Raynaud (1) , Nicolas Dheilly (1) , Mihai Lazar (1) , Dominique Tournier (1) , Pierre Brosselard (1) , Dominique Planson (1)

1 AMPERE - Ampère

4H-SiC p+-n diodes with very low reverse current and hard avalanche breakdown voltage were fabricated. Optical beam induced current (OBIC) measurements were employed to determine the impact ionization coefficients of electrons and holes. Simulations performed using the extracted values and the comparison of these coefficients with published data are discussed.

Domaines: Energie électrique

Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩