Transport scattering time probed through rf admittance of a graphene capacitor

Abstract : We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity, and diffusion constant are deduced from the low-frequency gate capacitance, its charging time, and their ratio. The admittance evolves from an rc-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0- to 200-meV investigated range at room temperature. This is consistent with a random mass model for Dirac fermions.
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Article dans une revue
Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 83 (12), pp.125408
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https://hal.archives-ouvertes.fr/hal-00657369
Contributeur : Jean-Marc Berroir <>
Soumis le : vendredi 6 janvier 2012 - 14:36:11
Dernière modification le : lundi 6 novembre 2017 - 01:09:31

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  • HAL Id : hal-00657369, version 1

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Emiliano Pallecchi, Andreas Betz, Julien Chaste, Gwendal Fève, Benjamin Huard, et al.. Transport scattering time probed through rf admittance of a graphene capacitor. Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 83 (12), pp.125408. 〈hal-00657369〉

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