Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

Cédric Robert Robert (1) , Alexandre Bondi (1) , Thanh Tra Nguyen (1) , Jacky Even (1) , Charles Cornet (1) , Olivier Durand (1) , Jean-Philippe Burin (1) , Jean-Marc Jancu (1) , Weiming Guo (1) , Antoine Létoublon (1) , Hervé Folliot (1) , Soline Richard (1) , Mathieu Perrin (1) , Nicolas Chevalier (1) , Olivier Dehaese (1) , Karine Tavernier (1) , Slimane Loualiche (1) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

This letter deals with the electroluminescence emission at room temperature of two light-emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary GaAsPN/GaPN multiple quantum wells. In agreement with tight-binding calculations, an indirect band gap is demonstrated from the temperature-dependent photoluminescence for the first structure. High efficiency photoluminescence is then observed for the second structure. Strong electroluminescence and photocurrent are measured from the diode structures at room temperature at wavelengths of 660 nm GaAsP/GaP and 730 nm GaAsPN/GaPN . The role of the incorporation of nitrogen on the optical band gap and on the nature of interband transitions is discussed.

Domaines: Optique / photonique

Cédric Robert Robert, Alexandre Bondi, Thanh Tra Nguyen, Jacky Even, Charles Cornet, et al.. Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen. Applied Physics Letters, 2011, 98, pp.251110. ⟨10.1063/1.3601857⟩. ⟨hal-00654272⟩