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Communication Dans Un Congrès Année : 2005

Impact of Hard Mask Composition and Etching Chemistry on Porous Ultra Low-k Material Modification

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hal-00649906 , version 1 (09-12-2011)

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  • HAL Id : hal-00649906 , version 1

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N. Posseme, T. David, Maxime Darnon, T. Chevolleau, O. Joubert. Impact of Hard Mask Composition and Etching Chemistry on Porous Ultra Low-k Material Modification. 6th International Conference on Microelectronics and Interfaces, 2005, United States. ⟨hal-00649906⟩
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