Epitaxial graphene on cubic SiC"111.../Si"111... substrate

A. Ouerghi (1) , A. Kahouli (1) , D. Lucot (1) , M. Portail (2) , L. Travers (1) , J. Gierak (1) , J. Penuelas (3) , P. Jegou (4) , A. Shukla (5) , T. Chassagne (6) , M. Zielinsk (6)

1 LPN - Laboratoire de photonique et de nanostructures
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
3 INL - H&N - INL - Hétéroepitaxie et Nanostructures
4 SCM - Service de Chimie Moléculaire
5 IMPMC - Institut de minéralogie et de physique des milieux condensés
6 Technolac - Savoie Technolac

Epitaxial graphene films grown on silicon carbide SiC substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC 111 /Si 111 substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene FLG surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples

Domaines: Physique Quantique [quant-ph]

A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, et al.. Epitaxial graphene on cubic SiC"111.../Si"111... substrate. Applied Physics Letters, 2010, 96, pp.191910. ⟨10.1063/1.3427406⟩. ⟨hal-00644362⟩