Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode

K. Jaworowicz (1) , Isabelle Ribet-Mohamed (1) , Cyril Cervera (2) , Jean-Baptiste Rodriguez (2, 3) , Philippe Christol (2, 3)

1 ONERA - The French Aerospace Lab [Châtillon]
2 IES - Institut d’Electronique et des Systèmes
3 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

We report on noise characterization of a midwave infrared (MWIR) InAs/GaSb superlattice (SL) single detector. The SL structure was made of eight InAs monolayers (MLs) and eight GaSb MLs, with a total thickness of 2 mu m (440 SL periods). This structure exhibits a cut-off wavelength of 4.8 mu m at 77 K. Extracted from current-voltage characteristics, zero-bias resistance area product above R(0) A above 5 x 10(5) Omega . cm(2) at 80 K was measured. Noise measurements were also performed under dark conditions. The measurements reveal the absence of 1/f noise above 30 Hz. Moreover, the detector under test remains Schottky noise-limited up to a bias voltage of -200 mV typically, which confirms the quality of the MWIR SL pin photodiode.

Domaines: Optique / photonique

K. Jaworowicz, Isabelle Ribet-Mohamed, Cyril Cervera, Jean-Baptiste Rodriguez, Philippe Christol. Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode. IEEE Photonics Technology Letters, 2011, 23 (4), pp.242-244. ⟨10.1109/LPT.2010.2093877⟩. ⟨hal-00641330⟩