Temperature dependence performances of InAs/GaSb superlattice photodiode
Résumé
In this communication we report on temperature dependence performances of short period InAs/GaSb pin superlattice (SL) photodiode grown by Molecular Beam Epitaxy on p-type GaSb substrate. SL symmetrical structure with 3 mu m thick active region, adapted for detection in the MWIR domain with cutoff wavelength varying from 4.6 mu m to 5.5 mu m in the temperature range 80-300 K, was processed in mesa photodiode in order to perform dark current measurements as a function of temperature. Extracted from current-voltage characteristics. R(0)A products above 1 x 10(6) Omega cm(2) at 80K and around 0.15 Omega cm(2) at 200 K were measured, and the quantitative analysis of the J-V curves allowed us to identify the dominant dark current mechanism in each operating temperature range. As a result, SL photodiode is dominated by generation-recombination (GR) processes at low temperature and becomes diffusion limited above 140 K. Such results are discussed and minority carrier lifetimes were extracted from J-V curve fitting.