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Communication Dans Un Congrès Année : 2010

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Résumé

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

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Dates et versions

hal-00636136 , version 1 (26-10-2011)

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  • HAL Id : hal-00636136 , version 1

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Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, et al.. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors. 35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩
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