MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.

Steven Albert (1) , J. Grandal (1) , M.A. Sanchez-Garcia (1) , Pierre Lefebvre (1, 2, 3) , J. Ristic (1) , E. Calleja (1) , Arantxa Vilalta-Clemente (4) , Bertrand Lacroix (4) , Pierre Ruterana (4) , E. Luna (5) , Uwe Jahn (5) , A. Trampert (5)

1 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
2 GES - Groupe d'étude des semiconducteurs
3 L2C - Laboratoire Charles Coulomb
4 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
5 PDI - Paul-Drude-Institut für Festkörperelektronik

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Steven Albert, J. Grandal, M.A. Sanchez-Garcia, Pierre Lefebvre, J. Ristic, et al.. MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.. 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany. ⟨hal-00633522⟩