High quality factor of AlN microdisks embedding GaN quantum dots

Meletios Mexis (1) , Sylvain Sergent (2) , Thierry Guillet (1) , Christelle Brimont (1) , Thierry Bretagnon (1) , Bernard Gil (1) , Fabrice Semond (2) , Mathieu Leroux (2) , Delphine Néel (3) , Sylvain David (3) , X. Checoury (3) , Philippe Boucaud (3)

1 GES - Groupe d'étude des semiconducteurs
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
3 IEF - Institut d'électronique fondamentale

We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride based cavities. We attribute this improvement of the Q factor to the etching quality and to the relatively low cavity loss by inserting dots into the microdisks. The uniformity of the resonant modes with respect to a wide range of energies allows us to identify the different radial mode families.

Domaines: Autre [cond-mat.other]

Meletios Mexis, Sylvain Sergent, Thierry Guillet, Christelle Brimont, Thierry Bretagnon, et al.. High quality factor of AlN microdisks embedding GaN quantum dots. International Workshop on Nitride Semiconductors (IWN2010), Sep 2010, Tampa, United States. pp.2328-2330, ⟨10.1002/pssc.201001161⟩. ⟨hal-00633272⟩