Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.

Pierre Corfdir (1) , Amélie Dussaigne (1) , H. Teisseyre (2) , Izabella Grzegory (2) , Tadeusz Suski (2) , Pierre Lefebvre (3) , Jean-Daniel Ganière (1) , N. Grandjean (1) , Benoit Deveaud-Plédran (1)

1 Institute of Condensed Matter Physics [Lausanne]
2 IHPP - Institute of High Pressure Physics [Warsaw]
3 L2C - Laboratoire Charles Coulomb

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.. 38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany. ⟨hal-00632230⟩