Active protections for normally-on SiC JFETs

Fabien Dubois (1) , Damien Risaletto (1) , Dominique Bergogne (1) , Hervé Morel (1) , Cyril Buttay (1) , Régis Meuret (2)

1 AMPERE - Ampère
2 SAFRAN, Grp Hispano Suiza

Normally-on Silicon Carbide (SiC) JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation of Voltage Fed Inverter (VFI). Moreover, the need for heavy and costly cooling system can be radically decreased due to the high thermal conductivity that exhibits the SiC material compared to Si counterpart. However some safety considerations have to be taken against short-circuit and voltage breakdown. In this paper, it is proposed an overview of the failure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are also presented. Experimental validation of such protections and investigation of gate destruction mode are proposed.

Domaines: Energie électrique

Fabien Dubois, Damien Risaletto, Dominique Bergogne, Hervé Morel, Cyril Buttay, et al.. Active protections for normally-on SiC JFETs. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629227⟩