N-doped GeTe as performance booster for embedded phase-change memories

A. Fantini , V. Sousa , L. Perniola , E. Gourvest (1) , J.C. Bastien , S. Maitrejean , S. Braga , N. Pashkov , A. Bastard , B. Hyot , A. Roule , A. Persico , H. Feldis , C. Jahan , J.F. Nodin , D. Blachier , A. Toffoli , G. Reimbold , F. Fillot , F. Pierre , R. Annunziata , D. Bensahel (2) , P. Mazoyer , C. Vallee (1) , T. Billon , J. Hazart , B. de Salvo , F. Boulanger

1 LTM - Laboratoire des technologies de la microélectronique
2 ST-CROLLES - STMicroelectronics [Crolles]

A. Fantini, V. Sousa, L. Perniola, E. Gourvest, J.C. Bastien, et al.. N-doped GeTe as performance booster for embedded phase-change memories. Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States. ⟨hal-00625213⟩