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N-doped GeTe as performance booster for embedded phase-change memories

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https://hal.archives-ouvertes.fr/hal-00625213
Contributor : Marielle Clot <>
Submitted on : Wednesday, September 21, 2011 - 10:08:00 AM
Last modification on : Thursday, November 19, 2020 - 3:52:07 PM

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  • HAL Id : hal-00625213, version 1

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A. Fantini, V. Sousa, L. Perniola, E. Gourvest, J.C. Bastien, et al.. N-doped GeTe as performance booster for embedded phase-change memories. Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States. ⟨hal-00625213⟩

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