Aluminum nitride nano-dots prepared by plasma enhanced chemical vapor deposition on Si(111)

Z. Bouchkour (1) , Pascal Tristant (2) , Elsa Thune (3) , Christelle Dublanche-Tixier (2) , Cédric Jaoul (2) , René Guinebretière (3)

1 SPCTS - Science des Procédés Céramiques et de Traitements de Surface
2 Axe 2 : procédés de traitements de surface
3 Axe 3 : organisation structurale multiéchelle des matériaux

Aluminum nitride nano-dots were grown on Si(111) substrates using microwave plasma enhanced chemical vapor deposition (MWPECVD). This technique is used for the first time in this kind of application and we showed the possibility to obtain AlN nano-dots and how to control their size and density on the substrate by adjusting the deposition rate, the substrate temperature and the substrate bias voltage. Atomic force microscopy images have been obtained and Fourier transform infrared spectroscopy has been carried out to ensure that the AlN composition is maintained.

Mots clés: Nano-dots; Aluminum nitride; PECVD; AFM; FTIR

Z. Bouchkour, Pascal Tristant, Elsa Thune, Christelle Dublanche-Tixier, Cédric Jaoul, et al.. Aluminum nitride nano-dots prepared by plasma enhanced chemical vapor deposition on Si(111). Surface and Coatings Technology, 2011, 205, pp.S586-S591. ⟨10.1016/j.surfcoat.2011.01.011⟩. ⟨hal-00611724⟩