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Article Dans Une Revue IEEE Electron Device Letters Année : 2010

Electrical Measurement of the Thermal Impedance of Bipolar Transistors

Abdelkader El Rafei
  • Fonction : Auteur
Raymond Quéré
Raphaël Sommet

Résumé

In this letter, we present a characterization method for the determination of the thermal impedance of heterostructure bipolar transistors. The thermal impedance was characterized using low-frequency S-parameter measurements. We will show that our method can be used to characterize the thermal impedance independent of the transistor size.
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Dates et versions

hal-00606398 , version 1 (06-07-2011)

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Citer

Abdelkader El Rafei, Raymond Quéré, Raphaël Sommet. Electrical Measurement of the Thermal Impedance of Bipolar Transistors. IEEE Electron Device Letters, 2010, 31 (9), pp.939-941. ⟨10.1109/LED.2010.2052232⟩. ⟨hal-00606398⟩

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