30-band k.p method for quantum semiconductor heterostructures

Soline Richard (1) , Faycal Raouafi (2) , Alexandre Bondi (1) , Laurent Pedesseau (1) , Claudine Katan (1, 3) , Jean-Marc Jancu (1) , Jacky Even (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 Laboratoire de Physico-chimie des Matériaux Polymères
3 CPM - Chimie et Photonique Moléculaires

We illustrate how the linear combination of zone center bulk bands combined with the full-zone k*p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/ AlAs superlattices.

Domaines: Optique / photonique

Soline Richard, Faycal Raouafi, Alexandre Bondi, Laurent Pedesseau, Claudine Katan, et al.. 30-band k.p method for quantum semiconductor heterostructures. Applied Physics Letters, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩. ⟨hal-00604845⟩