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Communication Dans Un Congrès Année : 2009

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

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hal-00603820 , version 1 (27-06-2011)

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  • HAL Id : hal-00603820 , version 1

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J. Buckley, T. Pro, R. Barattin, A. Calborean, K. Huang, et al.. From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW. to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States. ⟨hal-00603820⟩
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