Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanotechnology Année : 2011

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Philippe Pareige

Résumé

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
Fichier principal
Vignette du fichier
photogeneration_radial_doping_gradient_SiNWs.pdf (1.04 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00603527 , version 1 (25-06-2011)

Identifiants

Citer

D.H.K. Murthy, T. Xu, W. H. Chen, J. Houtepen A., T.J. Savenije, et al.. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient. Nanotechnology, 2011, 22 (31), pp.315710. ⟨10.1088/0957-4484/22/31/315710⟩. ⟨hal-00603527⟩
249 Consultations
204 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More