Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2011

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

Résumé

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well beyond the highest reported values of any GaN-on-Si HEMTs. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103GHz with 0.16-μm gate length, respectively, resulting in a high fT.Lg product that promises low-cost, high performance millimeter wave electronics.
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Dates et versions

hal-00603010 , version 1 (24-06-2011)

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F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, et al.. Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon. Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩
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