MOCVD growth mechanisms of ZnO nanorods

Guillaume Perillat-Merceroz (1, 2) , Pierre-Henri Jouneau (2) , Guy Feuillet (1) , Robin Thierry (1) , Milan Rosina (1) , Pierre Ferret (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée

ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and optical quality. Catalyst free growth of nanorods by metalorganic chemical vapour deposition (MOCVD) was carried out on (0001) sapphire substrates. Arrays of well-aligned, vertical nanorods were obtained with uniform lengths and diameters. A thin wetting layer in epitaxy with the sapphire substrate is formed first, followed by pyramids and nanorods. The nucleation of nanorods occurs either directly at the interface, or later on top of some of the pyramids, suggesting various nucleation mechanisms. It is shown that crystal polarity plays a critical role in the growth mechanism with nanorods of Zn polarity and their surrounding pyramids with O polarity. A growth mechanism is proposed to explain that most threading dislocations lie in the wetting layer, with only a few in the pyramids and none in the nanorods.

Mots clés: ZnO; nanowire; nanorod; epitaxy; polarity; nucleation; defects; transmission electron microscopy

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Guillaume Perillat-Merceroz, Pierre-Henri Jouneau, Guy Feuillet, Robin Thierry, Milan Rosina, et al.. MOCVD growth mechanisms of ZnO nanorods. Journal of Physics: Conference Series, 2010, 209 (1), pp.012034. ⟨10.1088/1742-6596/209/1/012034⟩. ⟨hal-00601939⟩