State of the art of high temperature power electronics

Cyril Buttay (1) , Dominique Planson (1) , Bruno Allard (1) , Dominique Bergogne (1) , Pascal Bevilacqua (1) , Charles Joubert (1) , Mihai Lazar (1) , Christian Martin (1) , Hervé Morel (1) , Dominique Tournier (1) , Christophe Raynaud (1)

1 AMPERE - Ampère

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150-200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Mots clés: High-temperature electronics; Power electronics; Silicon carbide; Semiconductor devices

Domaines: Energie électrique

Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩