Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

Omar Morandi (1, 2) , Paul-Antoine Hervieux (1) , Giovanni Manfredi (1)

1 IPCMS - Institut de Physique et Chimie des Matériaux de Strasbourg
2 CALVI - Scientific computation and visualization

A free-parameter theoretical model is developed in order to study the ultrafast dynamics in confined diluted magnetic semiconductors induced by laser. The hole-spin relaxation process is due to the Elliot-Yafet mechanism, which involves the scattering of the holes on the localized magnetic impurities. The role played by the quantum confinement and the band structure is analyzed. It is shown that the sample thickness and the background hole density strongly influences the phenomenon of demagnetization. Quantitative results are given for III-V ferromagnetic GaMnAs quantum wells of thickness 4 and 6 nm.

Mots clés: diluted magnetic semiconductors; ultrafast demagnetization; Elliot-Yafet mechanism

Domaines: Physique Quantique [quant-ph]; Autre [cond-mat.other]; Science des matériaux [cond-mat.mtrl-sci]

Omar Morandi, Paul-Antoine Hervieux, Giovanni Manfredi. Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (15), pp.155309. ⟨10.1103/PhysRevB.81.155309⟩. ⟨hal-00596664⟩