Study of rear pecvd dielectrics stacks for industrial silicon solar cells

Julien Dupuis (1) , Erwann Fourmond (1) , Virginie Mong-The Yen (2) , Oleksiy Nichiporuk (2) , Mathias Greffioz , Nam Lê Quang (2) , Mustapha Lemiti (1)

1 INL - PV - INL - Photovoltaïque
2 Photowatt

In this article, we used 2D simulation to evaluate the influence of the Metal-Insulator-Semiconductor (MIS) and fixed charge density contained in the dielectric layers which may be used for the passivation of the rear side of silicon solar cells. Negatives fixed charges densities were found in PECVD SiOx:H and SiNx:H dielectrics by dark-capacitance-voltage measurement, using a new method more adapted to solar cell applications. Next, multicrystalline silicon solar cells based on the i-PERC process were made with PECVD SiOx:H / SiNx:H stacks of different thicknesses. I(V) characterizations showed open-circuit voltage and fill factor degradations for the processed cells compared to the reference. These degradations were analyzed by spectral response measurements, scanning electron microscopy, and infrared thermography. It was found that the serigraphy paste and the laser impacts on grains boundary were re-sponsible for the degradations.

Mots clés: Silicon-Oxide; Silicon-Nitride; Capacitance-Voltage Measurement; PECVD

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Julien Dupuis, Erwann Fourmond, Virginie Mong-The Yen, Oleksiy Nichiporuk, Mathias Greffioz, et al.. Study of rear pecvd dielectrics stacks for industrial silicon solar cells. Proc. of the 24th European PVSEC, Sep 2009, Hamburg, France. pp.4. ⟨hal-00593537⟩