Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 3: Clarification of SOA

Stephane Azzopardi (1) , Adel Benmansour (1) , J.-C. Martin (1)

1 IMS - Laboratoire de l'intégration, du matériau au système

To investigate the SOA, we will focus on three objectives as follows: - the failure under short circuit by considering the current and voltage waveforms, the locus, the internal device analysis and the failure mechanism identification - the failure under clamped inductive load by considering the current and voltage waveforms, the locus, the internal device analysis and the failure mechanism identification - the identification of the parameters limiting the device operation and which should be considered to improve the SOA of the IGBT

Domaines: Energie électrique

Stephane Azzopardi, Adel Benmansour, J.-C. Martin. Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 3: Clarification of SOA. 2011. ⟨hal-00584190⟩