Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

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https://hal.archives-ouvertes.fr/hal-00584063
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Submitted on : Thursday, April 7, 2011 - 2:25:27 PM
Last modification on : Thursday, January 11, 2018 - 6:26:12 AM

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David Mouneyrac, J.G. Harnett, Jean-Michel Le Floch, M.E. Tobar, Dominique Cros, et al.. Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures. Journal of Applied Physics, American Institute of Physics, 2010, 108 (10), pp.104107. ⟨hal-00584063⟩

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