Two-dimensional pressure-induced electronic topological transition in Bi2Te3

Alain Polian (1) , Michel Gauthier (1) , Sergio Michielon Souza (2) , Daniela Menegon Triches (2) , Jo˜ao Cardoso de Lima (3) , Tarciso Antonio Grandi (3)

1 IMPMC - Institut de minéralogie et de physique des milieux condensés
2 Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade,
3 Departamento de Física [Universidade Federal de Santa Catarina]

A structural peculiarity of the electronic topological transition (ETT) occurring within the pressure stability range of the low-pressure rhombohedral phase I has been evidenced in Bi2Te3. On both sides of the ETT the structure remains unchanged. Nevertheless, precise investigation of x-ray diffraction patterns allows us to conclude that this ETT obeys the lamellar character of this compound but in a counterintuitive way. Indeed, the signature of this ETT can be detected only in the layers' plane in the pressure variation of the lattice parameter a with a 25% increase of the lattice modulus and a 68% decrease of its pressure derivative. On the contrary, no singularity occurs perpendicularly to the layers of the Bi2Te3 structure.

Domaines: Autre [cond-mat.other]; Géophysique [physics.geo-ph]; Acoustique [physics.class-ph]; Science des matériaux [cond-mat.mtrl-sci]

Alain Polian, Michel Gauthier, Sergio Michielon Souza, Daniela Menegon Triches, Jo˜ao Cardoso de Lima, et al.. Two-dimensional pressure-induced electronic topological transition in Bi2Te3. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.113106. ⟨10.1103/PhysRevB.83.113106⟩. ⟨hal-00581275⟩