Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher (1) , Yvon Cordier (2) , Fabrice Semond (2) , Virginie Brandli (1) , Bertrand Grimbert (1) , Achraf Ben Amar (1) , Matthieu Werquin , Christophe Boyaval (1) , Christophe Gaquière (1) , Didier Theron (1) , Lionel Buchaillot (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.

Mots clés: Gallium nitride; HEMTs; Logic gates; Silicon; Micromechanical devices; Optical resonators; Aluminum gallium nitride

Domaines: Sciences de l'ingénieur [physics]

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, et al.. Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers. 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩