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Conference papers

Origin of the morphology for <111>-oriented Si nanowires

T. Xu J.P. Nys Maxime Berthe B. Grandidier D. Stiévenard 1
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
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Conference papers
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https://hal.archives-ouvertes.fr/hal-00575367
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Submitted on : Thursday, March 10, 2011 - 10:30:40 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM

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  • HAL Id : hal-00575367, version 1

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IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

Citation

T. Xu, J.P. Nys, Maxime Berthe, B. Grandidier, D. Stiévenard. Origin of the morphology for <111>-oriented Si nanowires. 4th Nanowire Growth Workshop, NWG 2009, 2009, Paris, France. ⟨hal-00575367⟩

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