Graphene growth by molecular beam epitaxy on the carbon face of SiC

E. Moreau , S. Godey , F.J. Ferrer , D. Vignaud , X. Wallart (1) , J. Avila , M.C. Asensio , F. Bournel , J.J. Gallet

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, et al.. Graphene growth by molecular beam epitaxy on the carbon face of SiC. 2nd International Symposium on the Science and Technology of Epitaxial Graphene, STEG2, 2010, Amelia Island, FL, United States. ⟨hal-00573660⟩