On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films
Résumé
We report on a possible origin of electrical heterogeneities in 4 at% Al doped ZnO (AZO) reactively sputtered films. It is found through Zn L 3 and Al K edge X-ray absorption near edge structure (XANES) that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al 2 O 3 (ZnO) m homologous phase that degrades the electrical conductivity. Transparent conducting oxides (TCOs) characterized by both high transparency in the visible range and high electrical conductivity are key materials for devices such
Fichier principal
PEER_stage2_10.1088%2F0022-3727%2F43%2F13%2F132003.pdf (298.89 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...