Thulium-doped silica fibers with enhanced 3H4 level lifetime : modelling the devices for 800-820 nm band

Pavel Peterka (1) , Ivan Kašík (1) , Anirban Dhar (2) , Bernard Dussardier (3) , Wilfried Blanc (3)

1 UFE / CAS - Institute of Photonics and Electronics of the Czech Academy of Sciences
2 IPE - Institute of Photonics and Electronics
3 LPMC - Laboratoire de physique de la matière condensée

Silica-based thulium-doped fiber devices operating around 810 nm would extend the spectral range covered by high- power fiber devices. Using a comprehensive numerical model of the fiber we have shown that efficient lasing at 810 nm can be achieved for specific ranges of the laser cavity parameters in silica-based thulium-doped fibers with enhanced 3H4 lifetime up to 58 μs as measured in our highly alumina-codoped fibers. We present optimization of the thulium-doped fiber and laser cavity parameters and also potential applications of the developed host material in amplifiers and broadband sources.

Mots clés: thulium; fiber lasers; fiber amplifiers; optical fibers

Domaines: Optique [physics.optics]

Pavel Peterka, Ivan Kašík, Anirban Dhar, Bernard Dussardier, Wilfried Blanc. Thulium-doped silica fibers with enhanced 3H4 level lifetime : modelling the devices for 800-820 nm band. Proceedings of SPIE, the International Society for Optical Engineering, 2010, 7843, pp.78430A-1 - 78430A-9. ⟨hal-00561429⟩