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Conference papers
Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs
J. Kuzmik
C. Ostermaier
G. Pozzovivo
B. Basnar
W. Schrenk
J.F. Carlin
M. Gonschorek
E. Feltin
N. Grandjean
Y. Douvry
Christophe Gaquière
Jean-Claude de Jaeger
1
G. Strasser
D. Pogany
E. Gornik
N. Grandjean
Author
Y. Douvry
Author
Christophe Gaquière
Author IdHAL : christophe-gaquiere ORCID : https://orcid.org/0000-0003-3082-2489
Jean-Claude de Jaeger 1
Author IdHAL : jean-claude-dejaeger
1
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 ([Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX - France)
- Centrale Lille (École Centrale de Lille - Cité Scientifique - CS 20048 59651 Villeneuve d'Ascq Cedex - France)
- Institut supérieur de l'électronique et du numérique (ISEN) (France)
- UVHC - Université de Valenciennes et du Hainaut-Cambrésis (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
- Université de Lille (Lille - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8520 (France)
- UPHF - Université Polytechnique Hauts-de-France (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
Document type :
Conference papers
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00550008
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2010 - 10:39:24 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2010 - 10:39:24 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM
Identifiers
- HAL Id : hal-00550008, version 1
- DOI : 10.1109/ASDAM.2010.5666325
Collections
IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES
Citation
J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, et al.. Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.163-166, ⟨10.1109/ASDAM.2010.5666325⟩. ⟨hal-00550008⟩
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