Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

J. Kuzmik , C. Ostermaier , G. Pozzovivo , B. Basnar , W. Schrenk , J.F. Carlin , M. Gonschorek , E. Feltin , N. Grandjean , Y. Douvry , Christophe Gaquière , Jean-Claude de Jaeger (1) , G. Strasser , D. Pogany , E. Gornik

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, et al.. Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.163-166, ⟨10.1109/ASDAM.2010.5666325⟩. ⟨hal-00550008⟩