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Conference papers

Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

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https://hal.archives-ouvertes.fr/hal-00550008
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Submitted on : Thursday, December 23, 2010 - 10:39:24 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM

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J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, et al.. Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.163-166, ⟨10.1109/ASDAM.2010.5666325⟩. ⟨hal-00550008⟩

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