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Conference papers

Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs

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Conference papers
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https://hal.archives-ouvertes.fr/hal-00549998
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Submitted on : Thursday, December 23, 2010 - 10:29:27 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM

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  • HAL Id : hal-00549998, version 1

Citation

N. Malbert, C. Sury, A. Curutchet, N. Labat, C. Dua, et al.. Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87. ⟨hal-00549998⟩

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