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Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs
N. Malbert
C. Sury
A. Curutchet
N. Labat
C. Dua
M. Oualli
Virginie Hoel
Y. Douvry
Jean-Claude de Jaeger
1
C. Bru-Chevallier
W. Chikaoui
J.M. Bluet
C. Dua
Author
M. Oualli
Author
Virginie Hoel
Author IdHAL : virginie-hoel ORCID : https://orcid.org/0000-0003-4652-4742
Y. Douvry
Author
Jean-Claude de Jaeger 1
Author IdHAL : jean-claude-dejaeger
C. Bru-Chevallier
Author IdHAL : catherine-bru-chevallier
W. Chikaoui
Author
J.M. Bluet
Author IdHAL : jean-marie-bluet ORCID : https://orcid.org/0000-0002-1672-6725
1
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 ([Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX - France)
- Centrale Lille (École Centrale de Lille - Cité Scientifique - CS 20048 59651 Villeneuve d'Ascq Cedex - France)
- Institut supérieur de l'électronique et du numérique (ISEN) (France)
- UVHC - Université de Valenciennes et du Hainaut-Cambrésis (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
- Université de Lille (Lille - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8520 (France)
- UPHF - Université Polytechnique Hauts-de-France (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
Document type :
Conference papers
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00549998
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2010 - 10:29:27 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2010 - 10:29:27 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM
Identifiers
- HAL Id : hal-00549998, version 1
Collections
IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES
Citation
N. Malbert, C. Sury, A. Curutchet, N. Labat, C. Dua, et al.. Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87. ⟨hal-00549998⟩
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