GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C

F Medjdoub , D. Marcon , J. Das , J. Derluyn , K. Cheng , S. Degroote , N. Vellas , Christophe Gaquière (1) , Marie Germain , S. Decoutere

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, et al.. GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩