Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

Hassan Ali Barkad (1) , Ali Soltani (1) , Maghnia Mattalah (1) , J-C Gerbedoen (1) , Michel Rousseau (1) , Jean-Claude de Jaeger (1) , Ali Benmoussa (2) , Vincent Mortet (3) , Ken Haenen (3) , Brahim Benbakhti (4) , myriam moreau (5) , Russell Dean Dupuis (6) , Abdallah Ougazzaden (7)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ROB - Royal Observatory of Belgium = Observatoire Royal de Belgique
3 Institute for Materials Research
4 DEEE - Department of Electrical and Electronic Engineering [London]
5 LASIRE - Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516
6 Georgia Institute of Technology [Atlanta]
7 Georgia Tech Lorraine [Metz]

Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallisation. The material is characterised by micro-Raman spectroscopy and X-ray diffraction technique. The detector presents extremely low dark current of 100fA at -100V DC bias for a device area of 3.1 mm 2. It also exhibits a rejection ratio between 180nm and 300nm of three orders of magnitude with a very sharp cut-off wavelength at 203nm (∼6.1eV). The simulation, based on a 2D energy-balance model using COMSOL® software, permits to help the designer for the optimum topology determination by means of physical studies. The measurement results are in good agreement with the model predictions.

Mots clés: Simulation; Photodiodes; AlN; deep UV; Simulation.

Domaines: Sciences de l'ingénieur [physics]

Hassan Ali Barkad, Ali Soltani, Maghnia Mattalah, J-C Gerbedoen, Michel Rousseau, et al.. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes. Journal of Physics D: Applied Physics, 2010, 43 (46), pp.465104. ⟨10.1088/0022-3727/43/46/465104⟩. ⟨hal-00569746⟩