DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector
Résumé
We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 $\mu\hbox{m}$. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of $-$16.6 V were obtained.