Relaxation dynamics in covalently bonded organic monolayers on silicon

N. Clement , S. Pleutin , David Guérin , D. Vuillaume

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization in the monolayer in one hand, and the presence of defects at the silicon/molecule interface in the other hand. We propose a small signal equivalent circuit suitable for the simulations of these molecular devices in commercial device simulators. Our results concern monolayers of alkyl chains considered as a model system but can be extended to other molecular monolayers. These results open door to a better control and optimization of molecular devices.

Domaines: Physique [physics]

N. Clement, S. Pleutin, David Guérin, D. Vuillaume. Relaxation dynamics in covalently bonded organic monolayers on silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.035404-1-9. ⟨10.1103/PhysRevB.82.035404⟩. ⟨hal-00548973⟩