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Article Dans Une Revue Journal of Applied Physics Année : 2010

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

Résumé

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained layer.” The threading dislocation density in the top layer is below 106 /cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates
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hal-00548708 , version 1 (25-05-2022)

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S.R. Plissard, Christophe Coinon, Ydir Androussi, X. Wallart. Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer. Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩. ⟨hal-00548708⟩
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