Comparative study of hexagonal and cubic GaN growth by RF-MBE
Résumé
The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers. (C) 1997 Elsevier Science S.A.