Homogeneous linewidth of the intraband transition at 1.55 mu m in GaN/AlN quantum dots

Abstract : We present homogeneous line width measurements of the intraband transition at 1.55 mu m in GaN/AlN quantum dots by means of nonlinear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5 K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476340]
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Article dans une revue
Applied Physics Letters, American Institute of Physics, 2010, 97, pp.061903. 〈10.1063/1.3476340〉
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Contributeur : Ges Aigle <>
Soumis le : vendredi 10 décembre 2010 - 12:01:15
Dernière modification le : vendredi 31 août 2018 - 09:36:02

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D. T. Nguyen, W. Wuester, Ph. Roussignol, C. Voisin, Guillaume Cassabois, et al.. Homogeneous linewidth of the intraband transition at 1.55 mu m in GaN/AlN quantum dots. Applied Physics Letters, American Institute of Physics, 2010, 97, pp.061903. 〈10.1063/1.3476340〉. 〈hal-00545467〉

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