GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature

Laurent Cerutti (1, 2) , Jean-Baptiste Rodriguez (1, 2) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

We have investigated the potential of GaSb-based lasers for emission at 1.55 mu m and monolithic integration on silicon. We designed an active region based on strained Ga0.8In0.2Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 mu m has been achieved up to 45 degrees C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 mu m with a threshold current density of 5 kA/cm(2).

Domaines: Physique [physics]

Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié. GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature. IEEE Photonics Technology Letters, 2010, 22 (8), pp.553-555. ⟨10.1109/LPT.2010.2042591⟩. ⟨hal-00539210⟩