Estimation of SiC JFET temperature during short-circuit operations

Mounira Berkani (1) , Stéphane Lefebvre (1) , Narjes Boughrara (1, 2) , Zoubir Khatir (3) , J.C. Faugières (1, 4) , Peter Friedrichs (5) , Ali Haddouche (6)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 Département de génie Mécanique [Skikda]
3 INRETS/LTN - Laboratoire des Technologies Nouvelles
4 CNAM Paris - Centre d'enseignement Cnam Paris
5 SiCED - SICED
6 Faculté des Scineces de l'Ingénieur

This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Mots clés: Temperature estimation; repetitive short circuit; Electrical caracterisation

Domaines: Electronique

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, J.C. Faugières, et al.. Estimation of SiC JFET temperature during short-circuit operations. Microelectronics Reliability, 2009, 49, pp.1358-1362. ⟨hal-00538538⟩