An Individual Carbon Nanotube Transistor Tuned by High Pressure

Christophe Caillier (1) , Anthony Ayari (1) , Vincent Gouttenoire (1) , Jean-Michel Benoit (1) , Vincent Jourdain (2) , Matthieu Picher (2) , Matthieu Paillet (2) , Sylvie Le Floch , Stephen T. Purcell (1) , Jean-Louis Sauvajol (2) , Alfonso San Miguel (1)

1 LPMCN - Laboratoire de Physique de la Matière Condensée et Nanostructures
2 LCVN - Laboratoire des colloïdes, verres et nanomatériaux

A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.

Mots clés: FIELD-EFFECT TRANSISTORS; ELECTRONIC-PROPERTIES; HYDROSTATIC-PRESSURE; SINGLE; TRANSITIONS; FABRICATION; SHAPE; SIZE

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Christophe Caillier, Anthony Ayari, Vincent Gouttenoire, Jean-Michel Benoit, Vincent Jourdain, et al.. An Individual Carbon Nanotube Transistor Tuned by High Pressure. Advanced Functional Materials, 2010, 20, pp.3330-3335. ⟨10.1002/adfm.201000398⟩. ⟨hal-00534234⟩