Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm

Damien Sangla (1, 2) , Marc Castaing (3, 2) , François Balembois (2) , Patrick Georges (2)

1 LPCML - Laboratoire de Physico-Chimie des Matériaux Luminescents
2 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa
3 OXXIUS

A Nd : YVO4 crystal was pumped directly into the emitting level by a laser diode at 914 nm for the first time to our knowledge. We achieved an output power of 11.5 W at 1064 nm for an absorbed pump power of 14.6 W, corresponding to an optical efficiency of 78.7%. We demonstrated that thermal effects are very weak, in agreement with the low quantum defect of only 14.1%.

Domaines: Optique [physics.optics]

Damien Sangla, Marc Castaing, François Balembois, Patrick Georges. Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm. Optics Letters, 2009, 34 (14), pp. 2159-2161. ⟨10.1364/OL.34.002159⟩. ⟨hal-00533550⟩